Ultrathin NbN Films for Superconducting Single-Photon Detectors

• Authors: W. Słysz , M. Guziewicz , M. Borysiewicz , J. Domagała , I. Pasternak , K. Hejduk , W. Rzodkiewicz , J. Ratajczak , J. Bar , M. Węgrzecki , P. Grabiec , R. Grodecki , I. Węgrzecka , R. Sobolewski
• Languages of publication: EN

Abstracts

EN

We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal Al_2O_3 and Si wafers, and SiO_2 and Si_3N_4 buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850°C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films.

Keywords

EN

74.62.Bf; 74.78.-w; 81.15.Cd; 81.15.Jj

Discipline

• 81.15.Jj: Ion and electron beam-assisted deposition; ion plating(see also 52.77.Dq Plasma-based ion implantation and deposition in physics of plasmas)
• 74.78.-w: Superconducting films and low-dimensional structures
• 74.62.Bf: Effects of material synthesis, crystal structure, and chemical composition(for methods of materials synthesis, see 81.20.-n)
• 81.15.Cd: Deposition by sputtering

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 200-203

Dates

published

2011-07

Contributors

author

W. Słysz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Guziewicz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Borysiewicz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

I. Pasternak

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Hejduk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Rzodkiewicz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Ratajczak

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Bar

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Węgrzecki

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Grabiec

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Grodecki

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

I. Węgrzecka

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R. Sobolewski

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
• Departments of Electrical and Computer Engineering and Physics and Astronomy, Materials Science Program and Laboratory for Laser Energetics, University of Rochester, Rochester, NY-14627-0231, USA

References

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Identifiers

DOI

10.12693/APhysPolA.120.200