Properties of Si:V Annealed under Enhanced Hydrostatic Pressure

• Authors: A. Misiuk , W. Wierzchowski , K. Wieteska , A. Barcz , J. Bak-Misiuk , L. Chow , R. Vanfleet , M. Prujszczyk
• Languages of publication: EN

Abstracts

EN

It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using V^{+} doses, D = (1-5) × 10^{15} cm^{-2}, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of VSi_2 are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of V^{+} and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.

Keywords

EN

61.72.Dd; 61.72.uf; 64.75.Qr; 66.30.Xj; 81.40.Xj

Discipline

• 66.30.Xj: Thermal diffusivity
• 61.72.Dd: Experimental determination of defects by diffraction and scattering
• 64.75.Qr: Phase separation and segregation in semiconductors
• 61.72.uf: Ge and Si

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 196-199

Dates

published

2011-07

Contributors

author

A. Misiuk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, 01-919 Warsaw, Poland

author

K. Wieteska

• Institute of Atomic Energy POLATOM, 05-400 Otwock-Świerk, Poland

author

A. Barcz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Bak-Misiuk

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

L. Chow

• University of Central Florida, Orlando, FL 32816, USA

author

R. Vanfleet

• Department of Physics, Brigham Young University, Provo, Utah, 84604, USA

author

M. Prujszczyk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.120.196