Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide

• Authors: M. Rawski , J. Żuk , M. Kulik , A. Droździel , L. Lin , S. Prucnal , K. Pyszniak , M. Turek
• Languages of publication: EN

Abstracts

EN

Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C Al^{+} ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.

Keywords

EN

61.72.U-; 78.30.-j; 61.05.Np; 63.50.-x; 79.20.Rf; 81.70.Fy

Discipline

• 63.50.-x: Vibrational states in disordered systems
• 81.70.Fy: Nondestructive testing: optical methods
• 79.20.Rf: Atomic, molecular, and ion beam impact and interactions with surfaces(for atomic and molecular beam techniques, see 37.20.+j; see also 34.35.+a Interactions of atoms and molecules with surfaces)
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 61.72.U-: Doping and impurity implantation
• 61.05.Np: Atom, molecule, and ion scattering (for structure determination only)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 192-195

Dates

published

2011-07

Contributors

author

M. Rawski

• Institute of Physics, Maria Curie-Skłodowska University, Pl. M.C. Skłodowskiej 1, 20-031 Lublin, Poland

author

J. Żuk

• Institute of Physics, Maria Curie-Skłodowska University, Pl. M.C. Skłodowskiej 1, 20-031 Lublin, Poland

author

M. Kulik

• Institute of Physics, Maria Curie-Skłodowska University, Pl. M.C. Skłodowskiej 1, 20-031 Lublin, Poland

author

A. Droździel

• Institute of Physics, Maria Curie-Skłodowska University, Pl. M.C. Skłodowskiej 1, 20-031 Lublin, Poland

author

L. Lin

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

author

S. Prucnal

• Institute of Physics, Maria Curie-Skłodowska University, Pl. M.C. Skłodowskiej 1, 20-031 Lublin, Poland
• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany

author

K. Pyszniak

• Institute of Physics, Maria Curie-Skłodowska University, Pl. M.C. Skłodowskiej 1, 20-031 Lublin, Poland

author

M. Turek

• Institute of Physics, Maria Curie-Skłodowska University, Pl. M.C. Skłodowskiej 1, 20-031 Lublin, Poland

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Identifiers

DOI

10.12693/APhysPolA.120.192