Ion and Electron Beam Induced Luminescence οf Rare Earth Doped YAG Crystals

• Authors: G. Gawlik , J. Sarnecki , I. Jóźwik , J. Jagielski , M. Pawłowska
• Languages of publication: EN

Abstracts

EN

The aim of this work was the evaluation of ion-beam induced luminescence for the characterization of luminescent oxide materials containing rare earth elements. The yttrium aluminium garnet epilayers doped with Nd, Pr, Ho, and Tm atoms were used. The ion-beam induced luminescence spectra were excited using 100 keV H_2^{+} ion beam and were recorded in the wavelengths ranging from 300 nm up to 1000 nm. The separate parts of the surface of the same samples were used for ion-beam induced luminescence and cathodoluminescence experiments. Cathodoluminescence spectra have been recorded in the range from 370 nm up to 850 nm at 20 keV e-beam in scanning electron microscope equipped with a grating spectrometer coupled with a photomultiplier. The observed narrow ion-beam induced luminescence lines can be ascribed to the well known radiative transitions in the rare-earth ions in the YAG crystals. The cathodoluminescence spectra reveal essentially the same emission lines as ion-beam induced luminescence. The decrease of the ion-beam induced luminescence lines intensity has been observed under the increasing ion fluences. The ion-beam induced luminescence may be used for characterization of transparent luminescent materials as an alternative method for cathodoluminescence and can be especially useful for observation of ion-beam damage formation in crystals.

Keywords

EN

78.60.Hk; 52.59.Bi; 79.20.Rf; 61.80.Lj; 41.75.Ak; 41.75.Cn; 61.72.S-; 61.72.-y; 29.40.-n; 77.84.Bw; 79.60.Ht; 87.53.Bn; 78.55.-m; 78.60.-b; 77.55.Px; 77.55.-g; 25.40.Lw

Discipline

• 41.75.Cn: Negative-ion beams
• 41.75.Ak: Positive-ion beams
• 77.84.Bw: Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
• 52.59.Bi: Grid- and ion-diode-accelerated beams
• 61.72.S-: Impurities in crystals
• 25.40.Lw: Radiative capture
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 87.53.Bn: Dosimetry/exposure assessment
• 77.55.-g: Dielectric thin films(see also 85.50.-n Dielectric, ferroelectric, and piezoelectric devices; for microelectronics applications, see 85.40.-e; for methods of film deposition, see 81.15.-z)
• 78.60.Hk: Cathodoluminescence, ionoluminescence
• 29.40.-n: Radiation detectors(for mass spectrometers, see 07.75.+h; see also 95.55.Vj Neutrino, muon, pion, and other particle detectors; cosmic ray detectors in astronomy)
• 61.80.Lj: Atom and molecule irradiation effects
• 77.55.Px: Epitaxial and superlattice films
• 79.20.Rf: Atomic, molecular, and ion beam impact and interactions with surfaces(for atomic and molecular beam techniques, see 37.20.+j; see also 34.35.+a Interactions of atoms and molecules with surfaces)
• 79.60.Ht: Disordered structures
• 78.60.-b: Other luminescence and radiative recombination
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 181-183

Dates

published

2011-07

Contributors

author

G. Gawlik

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

J. Sarnecki

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

I. Jóźwik

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

J. Jagielski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

M. Pawłowska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

References

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• 2. P.D. Townsend, M. Khanlary, D.E. Hole, Surf. Coat. Technol. 201, 8160 (2007)
• 3. A. Quaranta, J.C. Dran, J. Salomon, J.C. Pivin, A. Vomiero, M. Tonezzer, G. Maggioni, S. Carturan, G. Della Mea, J. Phys., Conf. Series 41, 543 (2006)
• 4. C. Manfredotti, E. Vittone, A. Lo, Giudice, C. Paolini, F. Fizzotti, G. Dinca, V. Ralchenko, S.V. Nistor, Diamond Relat. Mater. 10, 568 (2001)

Identifiers

DOI

10.12693/APhysPolA.120.181