RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN

• Authors: K. Pągowska , R. Ratajczak , A. Stonert , A. Turos , L. Nowicki , N. Sathish , P. Jóźwik , A. Muecklich
• Languages of publication: EN

Abstracts

EN

A systematic study on structural defect buildup in 320 keV Ar-ion bombarded GaN epitaxial layers has been reported, by varying ion fluences ranged from 5 × 10^{12} to 1 × 10^{17} at./cm^2. 1 μm thick GaN epitaxial layers were grown on sapphire substrates using the metal-organic vapor phase epitaxy technique. Rutherford backscattering/channeling with 1.7 MeV^4He beam was applied for analysis. As a complementary method high resolution transmission electron microscopy has been used. The later has revealed the presence of extended defects like dislocations, faulted loops and stacking faults. New version of the Monte Carlo simulation code McChasy has been developed that makes it possible to analyze such defects on the basis of the bent channel model. Damage accumulation curves for two distinct types of defects, i.e. randomly displaced atoms and extended defects (i.e. bent channel) have been determined. They were evaluated in the frame of the multistep damage accumulation model, allowing numerical parameterization of defect transformations occurring upon ion bombardment. Displaced atoms buildup is a three-step process for GaN, whereas extended defect buildup is always a two-step process.

Keywords

EN

61.82.Fk; 61.85.+p; 68.55.Ln; 68.35.Dv

Discipline

• 68.35.Dv: Composition, segregation; defects and impurities
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)
• 61.85.+p: Channeling phenomena (blocking, energy loss, etc.)
• 61.82.Fk: Semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 153-155

Dates

published

2011-07

Contributors

author

K. Pągowska

• Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland

author

R. Ratajczak

• Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland

author

A. Stonert

• Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland

author

A. Turos

• Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

L. Nowicki

• Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland

author

N. Sathish

• Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

P. Jóźwik

• Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

A. Muecklich

• Helmholtz-Zentrum Dresden-Rossendorf, POB 510119, D-01314 Dresden, Germany

References

• 1. K. Pagowska, R. Ratajczak, A. Stonert, L. Nowicki, A. Turos, Vacuum 83, S145 (2009)
• 2. L. Nowicki, A. Turos, R. Ratajczak, A. Stonert, F. Garrido, Nucl. Instrum. Methods Phys. Res. B 240, 277 (2005)
• 3. A. Turos, L. Nowicki, A. Stonert, K. Pągowska, J. Jagielski, A. Muecklich, Nucl. Instrum. Methods Phys. Res. B 268, 1718 (2010)
• 4. X.H. Wu, D. Kapolnek, E.J. Tarsa, B. Heying, S. Keller, B.P. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck, Appl. Phys. Lett. 68, 1371 (1996)
• 5. M. Kamp, Opt. Quantum Electron. 32, 227 (2000)
• 6. S.O. Kucheyev, J.S. Williams, C. Jagadish, Vacuum 73, 93 (2004)
• 7. S.O. Kucheyev, J.S. Williams, S.J. Pearton, Mater. Sci. Eng. 33, 51 (2001)
• 8. W. Jiang, W.J. Weber, C.M. Wang, Nucl. Instrum. Methods Phys. Res. B 206, 1037 (2003)
• 9. C. Liu, A. Wenzel, J.W. Gerlach, X.F. Fan, B. Rauschenbach, Surf. Coat. Technol. 128, 455 (2000)
• 10. E. Wendler, A. Kamarou, E. Alves, K. Gartner, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 206, 1028 (2003)
• 11. E. Wierzbicka, M. Wójcik, J. Gaca, K. Pągowska, A. Turos, to be published

Identifiers

DOI

10.12693/APhysPolA.120.153