Effect of Grain Size on Mechanical Properties of Irradiated Mono- and Polycrystalline MgAl_2O_4

• Authors: J. Jagielski , A. Piatkowska , P. Aubert , S. Labdi , O. Maciejak , M. Romaniec , L. Thomé , I. Jozwik , A. Debelle , A. Wajler , M. Boniecki
• Languages of publication: EN

Abstracts

EN

The influence of the size of crystalline regions on mechanical properties of irradiated oxides has been studied using a magnesium aluminate spinel MgAl_2O_4. The samples characterized by different dimensions of crystalline domains, varying from sintered ceramics with grains of few micrometers in size up to single crystals, were used in the experiments. The samples were irradiated at room temperature with 320 keV Ar^{2+} ions up to fluences reaching 5 × 10^{16} cm^{-2}. Nanomechanical properties (nanohardness and Young's modulus) were measured by using a nanoindentation technique and the resistance to crack formation by measurement of the total crack lengths made by the Vickers indenter. The results revealed several effects: correlation of nanohardness evolution with the level of accumulated damage, radiation-induced hardness increase in grain-boundary region and significant improvement of material resistance to crack formation. This last effect is especially surprising as the typical depth of cracks formed by Vickers indenter in unirradiated material exceeds several tens of micrometers, i.e. is more than hundred times larger than the thickness of the modified layer.

Keywords

EN

61.80.Jh; 61.82.Ms; 62.20.Qp; 68.37.Ps

Discipline

• 61.82.Ms: Insulators
• 62.20.Qp: Friction, tribology, and hardness(see also 46.55.+d Tribology and mechanical contacts in continuum mechanics of solids; for materials treatment effects on friction related properties, see 81.40.Pq)
• 68.37.Ps: Atomic force microscopy (AFM)
• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 118-121

Dates

published

2011-07

Contributors

author

J. Jagielski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
• The Andrzej Sołtan Institute for Nuclear Studies, Otwock/Świerk, Poland

author

A. Piatkowska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

P. Aubert

• Institut d'Electronique Fondamentale, Université Paris-Sud, Orsay, France

author

S. Labdi

• Université d'Evry-Val d'Essonne, Evry, France

author

O. Maciejak

• Université d'Evry-Val d'Essonne, Evry, France

author

M. Romaniec

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

L. Thomé

• Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse CNRS-IN2P3, Université Paris-Sud, Orsay, France

author

I. Jozwik

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

A. Debelle

• Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse CNRS-IN2P3, Université Paris-Sud, Orsay, France

author

A. Wajler

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

M. Boniecki

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.120.118