Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

• Authors: A. Iljinas , S. Burinskas , J. Dudonis
• Languages of publication: EN

Abstracts

EN

In this work Bi_2O_3 thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the Bi_2O_3 films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.

Keywords

EN

81.15.Cd; 68.55.-a; 78.20.-e

Discipline

• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 81.15.Cd: Deposition by sputtering
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 1
• Pages: 60-62

Dates

published

2011-07

Contributors

author

A. Iljinas

• Department of Physics, Kaunas University of Technology, Studentų 50, LT-51368, Kaunas, Lithuania

author

S. Burinskas

• Department of Physics, Kaunas University of Technology, Studentų 50, LT-51368, Kaunas, Lithuania

author

J. Dudonis

• Department of Physics, Kaunas University of Technology, Studentų 50, LT-51368, Kaunas, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.120.60