Magnetic Field Enhancement of the Hall Effect in Dilute Magnetic System La_{1 - x}Ce_{x}B_6 (x ≤ 0.1)

• Authors: A. Bogach , V. Glushkov , S. Demishev , N. Sluchanko , N. Shitsevalova , V. Fillipov , K. Flachbart
• Languages of publication: EN

Abstracts

EN

Magnetic field dependences of the Hall coefficient R_{H} and resistivity have been studied in detail for dilute magnetic compounds La_{1-x}Ce_{x}B_6 (x ≤ 0.1) at temperatures 1.8-300 K. It was established that the regime of weak localization of charge carriers, which was observed in these heavy fermion systems below 30 K destroys gradually in magnetic field up to 8 T. Moreover, in addition to the strong negative magnetoresistance (Δρ/ρ ≈ 80%) a drastic enhancement of the negative Hall coefficient in magnetic field (Δ R_{H}/R_{H} ≈ 50%) has been deduced at liquid helium temperatures. The results of comprehensive analysis contradict the predictions of Kondo-impurity approach for this archetypal strongly correlated electron system in the dilute impurity limit. An alternative interpretation of La_{1-x}Ce_{x}B_6 properties is developed on the basis of spin-polaron approach, Pauli paramagnetism and the density of states renormalization effects at low temperatures.

Keywords

EN

72.15.Gd

Discipline

• 72.15.Gd: Galvanomagnetic and other magnetotransport effects(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 118
• Issue: 5
• Pages: 931-932

Dates

published

2010-11

Contributors

author

A. Bogach

• A.M. Prokhorov General Physics Institute of RAS, 38, Vavilov Str., Moscow, 119991, Russia

author

V. Glushkov

• A.M. Prokhorov General Physics Institute of RAS, 38, Vavilov Str., Moscow, 119991, Russia

author

S. Demishev

• A.M. Prokhorov General Physics Institute of RAS, 38, Vavilov Str., Moscow, 119991, Russia

author

N. Sluchanko

• A.M. Prokhorov General Physics Institute of RAS, 38, Vavilov Str., Moscow, 119991, Russia

author

N. Shitsevalova

• Institute for Problems of Materials Science of UAS, 3, Krzhyzhanovsky Str., 03680 Kiev, Ukraine

author

V. Fillipov

• Institute for Problems of Materials Science of UAS, 3, Krzhyzhanovsky Str., 03680 Kiev, Ukraine

author

K. Flachbart

• Centre of Low Temperature Physics, IEP SAS and IPS FS UPJS, 04001 Košice, Slovakia

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Identifiers

DOI

10.12693/APhysPolA.118.931