The Study of Magnetization Process in Amorphous FeNiSiB Microwires

• Authors: J. Gamcova , R. Varga , B. Hernando , A. Zhukov
• Languages of publication: EN

Abstracts

EN

We have studied the magnetization process in amorphous Fe_{49.6}Ni_{27.9}Si_{7.5}B_{15} microwire. It was found that the hysteresis mechanism consists of two contributions: magnetoelastic and structural relaxation. It was shown that at low frequencies, the magnetization process is controlled mainly by the structural relaxation. At higher frequencies (above 50 Hz), the relaxation effect disappears and switching field is determined mainly by the magnetoelastic contribution. Moreover, the effect of thermal treatment at temperature 300°C has been studied. As-cast microwire is almost unsensible to the applied tensile stress since the applied stresses are lower than that induced during production. After annealing, the stresses relax and stress sensibility of microwires increases.

Keywords

EN

75.50.Kj; 75.60.Ej; 75.60.Jk

Discipline

• 75.60.Jk: Magnetization reversal mechanisms
• 75.60.Ej: Magnetization curves, hysteresis, Barkhausen and related effects(for hysteresis in ferroelectricity, see 77.80.Dj)
• 75.50.Kj: Amorphous and quasicrystalline magnetic materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 118
• Issue: 5
• Pages: 807-808

Dates

published

2010-11

Contributors

author

J. Gamcova

• Institute of Physics, Faculty of Sciences, P.J. Safarik University, Park Angelinum 9, 041 54 Kosice, Slovakia

author

R. Varga

• Institute of Physics, Faculty of Sciences, P.J. Safarik University, Park Angelinum 9, 041 54 Kosice, Slovakia

author

B. Hernando

• Fisica, Universidad de Oviedo, Oviedo, Oviedo, Asturias, Spain

author

A. Zhukov

• Dept. Fisica de Materiales, Fac. Quimica, UPV/EHU, San Sebastian, Spain

References

• 1. A. Zhukov, J. Gonzalez, M. Vazquez, V. Larin, A. Torcunov, in: Encyclopedia of Nanoscience and Nanotechnology, Ed. H.S. Nalwa, American Scientific, Stevenson Ranch (CA) 2004, Ch. 62, p. 23
• 2. M. Vazquez, Physica B 299, 302 (2001)
• 3. H. Chiriac, T.A. Ovari, Prog. Mater. Sci. 40, 333 (1996)
• 4. R. Varga, K.L. Garcia, A. Zhukov, M. Vazquez, P. Vojtanik, Appl. Phys. Lett. 83, 2620 (2003)
• 5. E. Komová, M. Varga, R. Varga, P. Vojtaník, J. Torrejon, M. Provencio, M. Vazquez, J. Phys., Condens. Matter 19, 236229 (2007)
• 6. P. Klein, R. Varga, G.A. Badini-Confalonieri, M. Vazquez, IEEE Trans. Magn. 46, 357 (2010)

Identifiers

DOI

10.12693/APhysPolA.118.807