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2010 | 118 | 2 | 375-378

Article title

Current-Voltage Characteristics of Nanowires Formed at the Co-Ge_{99.99}Ga_{0.01} Interface

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EN

Abstracts

EN
We present a method of measurement of the current-voltage (I-V) and conductance-voltage (G-V) characteristics of nanowires with quantum point contact formed at the Co-Ge_{99.99}Ga_{0.01} interface. The effect of the Fermi level pinning leads to the formation of an ohmic contact between Co and Ge_{99.99}Ga_{0.01}. On the measured characteristics, above the threshold value of voltage an exponential current growth is observed. Such effect could be useful in the production of the electronic nanodevices.

Keywords

EN

Contributors

author
  • Faculty of Electronics and Telecommunications, Poznań University of Technology, Piotrowo 3A, 60-965 Poznań, Poland
author
  • Faculty of Electronics and Telecommunications, Poznań University of Technology, Piotrowo 3A, 60-965 Poznań, Poland
author
  • Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland
author
  • Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland
author
  • Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland

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Document Type

Publication order reference

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YADDA identifier

bwmeta1.element.bwnjournal-article-appv118n238kz
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