Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors

• Authors: D. Kim , G. Kim , S. Jeon , M. Cho , H. Choi , M. Kim , D. Lee , J. Kim , J. Kim , G. Eom , J. Leem
• Languages of publication: EN

Abstracts

EN

Multi-stacked InAs QDs embedded in ten periods of GaAs/In_{0.1}Ga_{0.9}As strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/In_{0.1}Ga_{0.9}As strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850°C. At annealing temperature of 600°C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.

Keywords

EN

78.67.Hc; 78.55.Cr; 81.05.Ea

Discipline

• 78.55.Cr: III-V semiconductors
• 78.67.Hc: Quantum dots
• 81.05.Ea: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 6
• Pages: 941-944

Dates

published

2010-06

received

2009-06-18

Contributors

author

D. Kim

• Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea

author

G. Kim

• Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea

author

S. Jeon

• Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea

author

M. Cho

• Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea

author

H. Choi

• Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea

author

M. Kim

• Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea

author

D. Lee

• Lighting Module Research and Development, Samsung Electro-Mechanics Co., Ltd., Suwon 443-373, Korea

author

J. Kim

• Division of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756, Korea

author

J. Kim

• Department of Physics, Yeungnam University, Gyeongsan 712-749, Korea

author

G. Eom

• Division of General Education, Uiduk University, Gyeongju 780-713, Korea

author

J. Leem

• Center for Nano Manufacturing, Inje University, Gimhae 621-749, Korea

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Identifiers

DOI

10.12693/APhysPolA.117.941