Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies

• Authors: K. Mazur , W. Wierzchowski , K. Wieteska , W. Hofman , H. Sakowska , K. Kościewicz , W. Strupiński , W. Graeff
• Languages of publication: EN

Abstracts

EN

X-ray reflectometric and diffraction topographic methods were applied for examination of 4H and 6H silicon carbide substrates finished with various regimes, as well as, silicon carbide epitaxial layers. The investigations indicated a very good quality of the substrate surfaces finished with the process established at the Institute of Electronic Materials Technology, which provided the surface roughness σ = 0.55 ± 0.07 nm for 4H-SiC wafers. These values were better than those of substrate wafers offered by many commercial producers. The surface roughness was decreased during the initial high temperature etching to σ = 0.22 ± 0.07 nm. A relatively good structural quality was confirmed in the case of 4H epitaxial wafers deposited on the substrates prepared from the crystals manufactured at the IEMT, with the 8° off-cut from the main (001) plane.

Keywords

EN

61.05.cm; 61.72.Ff; 61.72.up

Discipline

• 61.05.cm: X-ray reflectometry (surfaces, interfaces, films)
• 61.72.up: Other materials
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2010
• Volume: 117
• Issue: 2
• Pages: 272-276

Dates

published

2010-02

Contributors

author

K. Mazur

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

K. Wieteska

• Institute of Atomic Energy Polatom, 05-400 Otwock-Świerk, Poland

author

W. Hofman

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

H. Sakowska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

K. Kościewicz

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Graeff

• HASYLAB at DESY, Notkestr. 85, 22-603 Hamburg, Germany

References

• 1. C. Li, I.B. Bhat, R. Wang, J. Seiler, J. Electron. Mat. 33, 481 (2004)
• 2. B. Stanglmeier, W. Lenger, W. Weber, H. Göbel, M. Schuster, Acta Cryst. A 48, 626 (1992)
• 3. M. Kikuchi, Y. Takahashi, T. Suga, S. Suzuki, Y. Bando, J. Amer. Ceram. Soc. 75, 189 (2005)
• 4. L. Zhou, V. Audurier, P. Pirouz, J. Elecrochem. Soc. 144, 161 (1997)
• 5. M. Servidori, R. Fabbri, J. Phys. D, Appl. Phys. 26, A22 (1993)
• 6. H. Jacobson, J. Birch, R. Yakimova, M. Syväjävri, M. Bergman, A. Ellison, T. Tuomi, E. Janzen, J. Appl. Phys. 91, 6354 (2002)
• 7. T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki, K. Arrai, J. Cryst. Growthg 260, 209 (2004)
• 8. H. Tsuchida, I. Kaamata, M. Nagano, J. Cryst. Growthg 310, 757 (2008)
• 9. X. Zheng, M. Skowronski, K.X. Liu, R.E. Stahlbush, J.J. Sumakeris, M.J. Paisley, M.J.O. Loughin, J. Appl. Phys. 102, 093520 (2007)
• 10. J. Sass, S. Jedynak, private communication
• 11. P. Caban, K. Kosciewicz, W. Strupinski, M. Wojcik, J. Gaca, J. Szmidt, M. Ozturk, E. Ozbay, J. Cryst. Growthg 310, 4876 (2008)

Identifiers

DOI

10.12693/APhysPolA.117.272