AC Conductivity and Dielectric Properties οf Amorphous Te_{42}As_{36}Ge_{10}Si_{12} Glass

• Authors: N. Hegab , H. El-Mallah
• Languages of publication: EN

Abstracts

EN

Te_{42}As_{36}Ge_{10}Si_{12} chalcogenide composition was prepared by conventional melt-quenching. The ac conductivity and the dielectric properties were carried out in the frequency range 0.5×10^{3}-4×10^{6} Hz and temperature range 300-423 K. The analysis of the experimental results of the frequency dependence of ac conductivity σ_{ac}(ω) indicates that σ_{ac}(ω) is proportional to ω^{s} where s> 1. The temperature dependence of both ac conductivity and the parameter s is reasonably well interpreted by the correlated barrier hopping model. The maximum barrier height W_{m} calculated from ac conductivity and the density of localized states were determined. Values of dielectric constant ε_{1} and dielectric loss ε_{2} were found to decrease with frequency and increase with temperature. The analysis of dielectric loss leads to determine the barrier height W_{m} and agrees with that proposed by the theory of hopping of charge carriers over potential barrier between charged defect states as suggested by Elliott in case of chalcogenide glasses.

Keywords

EN

72.80.Ng; 77.22.-d

Discipline

• 77.22.-d: Dielectric properties of solids and liquids(for dielectric properties of tissues and organs, see 87.19.rf)
• 72.80.Ng: Disordered solids

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 6
• Pages: 1048-1052

Dates

published

2009-12

received

2008-09-25

Contributors

author

N. Hegab

• Department of Physics, Faculty of Education, Ain Shams University, Roxy - Cairo, Egypt

author

H. El-Mallah

• Department of Physics & Mathematical Engineering, Faculty of Engineering, Suez Canal University, Port-Said, Egypt

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Identifiers

DOI

10.12693/APhysPolA.116.1048