Comparative Study between Energy Levels of Cr^{3+} and Co^{2+} Ions Doped in MgF_{2} Crystal

• Authors: R. Nistora , L. Andreici , N. Avram
• Languages of publication: EN

Abstracts

EN

The aim of this paper is to present a comparison of the energy level schemes of Cr^{3+} (3d^{3} electrons) and Co^{2+} (3d^{7} electrons), each of ions doped, separately, in MgF_{2} crystal. We report on the detailed and consistent crystal field analysis of Cr^{3+} spectra in MgF_{2} crystal and compare with results, previously obtained, for Co^{2+}, doped in same host matrix. The results are based on application of the exchange charge model of crystal field to the calculation of crystal field parameters and energy levels of both ions doped in MgF_{2}.The calculations have been performed on previously optimized geometry of MgF_{2} crystal. The obtained results are compared with experimental data and discussed.

Keywords

EN

71.70.Ch; 42.70.Hj; 61.72.S-

Discipline

• 42.70.Hj: Laser materials
• 71.70.Ch: Crystal and ligand fields
• 61.72.S-: Impurities in crystals

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 116
• Issue: 4
• Pages: 538-540

Dates

published

2009-10

Contributors

author

R. Nistora

• Departament of Physics, West University of Timisoara, 300223 Timisoara, Romania

author

L. Andreici

• Departament of Physics, West University of Timisoara, 300223 Timisoara, Romania

author

N. Avram

• Departament of Physics, West University of Timisoara, 300223 Timisoara, Romania
• Academy of Romanian Scientists, Independentei 54, 050094 Bucharest, Romania

References

• 1. S. Kuck, Appl. Phys. B 72, 515 (2001)
• 2. W.H. Baur, A.A. Khan, Acta Crystallogr. B 27, 2133 (1971)
• 3. H. Manaa, Y. Guyot, R. Moncorge, Phys. Rev. B1 48, 3633 (1993)
• 4. S.A. Payne, L.L. Chase, W.F. Krupte, J. Chem. Phys. 86, (1987)
• 5. Y. Suzuki, W.A. Sibley, O.H. El Bayoumi, T.M. Roberts, B. Bendow, Phys. Rev. B 35, 4472 (1987)
• 6. R. Nistora, L. Andreici, N.M. Avram, AIP Conf. Proc. 1131, 117 (2009)
• 7. B. Henderson, R.H. Bartram, Crystal-Field Engineering of Solid-StateLaser Materials, Cambridge University Press, Cambridge 2000
• 8. B.Z. Malkin, in: Spectroscopy of Solids Containing Rare-Earth Ions, Eds. by A.A. Kaplyanskii, B.M. Macfarlane, North Holland, Amsterdam 1987, p. 33
• 9. C. Rudowicz, M.G. Brik, N.M. Avram, Y.Y. Yeung, P. Gantek, J. Phys., Condens. Matter 18, 5221 (2006)
• 10. M.G. Brik, J.N. Kityk, Solid State Commun. 143, 326 (2007)
• 11. G.A. Bogomolova, L.A. Bumagina, A.A. Kaminskii, B.Z. Malkin, Fiz. Tverd. Tela (Soviet Physics of the Solid State) 19, 1439 (1977)
• 12. M.N. Popova, S.A. Klimin, E.P. Chukalina, R.Z. Levitin, B.V. Mill, B.Z. Malkin, E. Antic-Fidancev, J. Alloys Comp. 380, 84 (2004)
• 13. M.N. Popova, E.P. Chukalina, B.Z. Malkin, A.I. Iskhakova, E. Antic-Fidancev, P. Porcher, J.P. Chaminade, Phys. Rev. B 63, 075103 (2001)
• 14. M.N. Popova, S.A. Klimin, E.P. Chukalina, E.A. Romanov, B.Z. Malkin, E. Antic-Fidancev, B.V. Mill, G. Dhalenne, Phys. Rev. B 71, 024414 (2005)
• 15. M.G. Brik, C.N. Avram, N.M. Avram, in: OSA Trends in Optics and Photonics, Vol. 68, Advanced Solid-State Lasers, Eds. M.E. Fermannand, L.R. Marshall, Optical Society of America, Washington, DC 2002, p. 275
• 16. C. Jousseaume, D. Vivien, A. Kahn-Harari, B.Z. Malkin, Opt. Mater. 24, 143 (2003)
• 17. M.G. Brik, N.M. Avram, C.N. Avram, Physica B 371, 43 (2006)
• 18. M.G. Brik, N.M. Avram, C.N. Avram, C. Rudowicz, Y.Y. Yeung, P. Gnutek, J. Alloys Comp. 432, 61 (2007)
• 19. M.G. Brik, N.M. Avram, C.N. Avram, Acta Phys. Pol. A 112, 1055 (2007)
• 20. N.M. Avram, M.G. Brik, C.N. Avram, J. Opt. Adv. Mater. 10, 819 (2008)
• 21. N.M. Avram, M.G. Brik, C.N. Avram, Rom. Rep. Phys. 60, 723 (2008)
• 22. M.G. Brik, N.M. Avram, AIP. Conf. Proc. 1131, 86 (2009)
• 23. A.G. Abragam, B. Bleaney, Electron Paramagnetic Resonance of Transition Ions, Clarendon Press, Oxford 1970, p. 443
• 24. J.S. Griffith, The Theory of Transition Metal Ions, Cambridge University Press, Cambridge 1961

Identifiers

DOI

10.12693/APhysPolA.116.538