Characterized Microstructure and Electrical Properties of Hydrogenated Nanocrystalline Silicon Films by Raman and Electrical Conductivity Spectra

• Authors: Gao Xiao-Yong , Zhao Jian-Tao , Liu Yu-Fen , Lin Qing-Geng , Chen Yong-Sheng , Gu Jin-Hua , Yang Shi-E , Lu Jing-Xiao
• Languages of publication: EN

Abstracts

EN

Microstructure and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) film deposited on glass substrate at low temperature were characterized by average grain size, crystallinity, and dark electrical conductivity data obtained from the Raman and electrical conductivity spectroscopy, respectively. The average grain size, crystallinity and electrical conductivity have a similar change with substrate temperature. A threshold substrate temperature determined by silane concentration appears in their corresponding spectroscopy vs. substrate temperature. The dependence of crystallinity, average grain size and electrical conductivity on substrate temperature were accounted for by surface diffusion model and heterojunction quantum dot model, respectively.

Keywords

EN

71.23.Cq; 73.61.-r

Discipline

• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 71.23.Cq: Amorphous semiconductors, metallic glasses, glasses

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2009
• Volume: 115
• Issue: 3
• Pages: 738-741

Dates

published

2009-03

received

2008-10-01

(unknown)

2008-10-21

Contributors

author

Gao Xiao-Yong

• The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, 450052 Zhengzhou, China
• School of Physics and Engineering, Zhengzhou University, 450052 Zhengzhou, China

author

Zhao Jian-Tao

• The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, 450052 Zhengzhou, China

author

Liu Yu-Fen

• The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, 450052 Zhengzhou, China

author

Lin Qing-Geng

• The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, 450052 Zhengzhou, China

author

Chen Yong-Sheng

• The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, 450052 Zhengzhou, China

author

Gu Jin-Hua

• The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, 450052 Zhengzhou, China

author

Yang Shi-E

• The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, 450052 Zhengzhou, China

author

Lu Jing-Xiao

• The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, 450052 Zhengzhou, China

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Identifiers

DOI

10.12693/APhysPolA.115.738