Determination of Some Kinetic Parameters of Fast Surface States in Silicon Single Crystals by Means of Surface Acoustic Wave Method

• Authors: T. Pustelny , A. Opilski , B. Pustelny
• Languages of publication: EN

Abstracts

EN

The paper presents the acoustic method for determining some parameters of fast surface states in semiconductors. This method uses the interactions of the phonon-electron type for determining both the effective carrier lifetime τ influenced by the fast surface energetic states and the velocity g of the carrier trapped by the surface states. Some experimental results of the parameters τ and g in near-surface region of real Si(111) samples for their various surface treatments, obtained by the offered method, are presented.

Keywords

EN

72.50.+b; 77.65.Dq; 73.50.Rb; 73.20.-r; 73.61.-r

Discipline

• 73.20.-r: Electron states at surfaces and interfaces
• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 77.65.Dq: Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics(see also 43.35.Pt Surface waves in solids and liquids—in Acoustics Appendix; for surface acoustic wave transducers, see 43.38.Rh—in Acoustics Appendix; for acousto-optical effects, see 78.20.hb, and 43.35.Sx—in Acoustics Appendix)
• 73.50.Rb: Acoustoelectric and magnetoacoustic effects
• 72.50.+b: Acoustoelectric effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 6A
• Pages: A-183-A-190

Dates

published

2008-12

Contributors

author

T. Pustelny

• Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland

author

A. Opilski

• Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland

author

B. Pustelny

• Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.114.A-183