Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays

• Authors: P. Jaguiro , P. Katsuba , S. Lazarouk , A. Smirnov
• Languages of publication: EN

Abstracts

EN

The use of silicon based light emitting diodes may completely solve the problem of low compatibility of optoelectronics elements and silicon chip. At present time the most suitable kinds of Si-LEDs are monocrystal and porous silicon avalanche LEDs. They have advantages such as long operation lifetime (>10000 hours), continuous spectrum, which allows to filter RGB colors, operation voltages (<12 V), extremely sharp voltage-current characteristic, nanosecond response time, and high high operation current densities (up to 8000 A/cm^2 in pulse mode). Rather low energy efficiency (<1%) is not so significant for near to eyes (NTE) microdisplays. These advantages open a way to design a high performance and cost effective passive addressed microdisplays.

Keywords

EN

78.55.Mb; 78.60.Fi; 85.60.Jb; 85.60.Pg

Discipline

• 85.60.Pg: Display systems(for field emission display, see 85.45.Fd, for optical display devices, see 42.79.Kr; for electrochemical displays, see 82.47.Tp; see also 07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.)
• 78.60.Fi: Electroluminescence
• 78.55.Mb: Porous materials
• 85.60.Jb: Light-emitting devices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 5
• Pages: 1031-1036

Dates

published

2007-11

received

2007-09-03

Contributors

author

P. Jaguiro

• Belarusian State University of Informatics and Radioelectronics, P. Browka Street 6, 220600 Minsk, Belarus

author

P. Katsuba

• Belarusian State University of Informatics and Radioelectronics, P. Browka Street 6, 220600 Minsk, Belarus

author

S. Lazarouk

• Belarusian State University of Informatics and Radioelectronics, P. Browka Street 6, 220600 Minsk, Belarus

author

A. Smirnov

• Belarusian State University of Informatics and Radioelectronics, P. Browka Street 6, 220600 Minsk, Belarus

References

• 1. A.G. Chynoweth, K.G. McKay, Phys. Rev., 102, 369, 1956
• 2. X. Zhang, Electrochemistry of Silicon and Its Oxide, Kluwer/Plenum, New York 2001
• 3. A. Halimaoui in: Properties of Porous Silicon, Ed. L.T.Canham, Short Run Press, London 1997, p. 18
• 4. B. Geloz, N. Koshida, J. Appl. Phys., 88, 4319, 2000
• 5. S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, A. Ferrari, Appl. Phys. Lett., 68, 1648, 1996
• 6. P. Jaguiro, A. Ferrari, S. Lazarouk, Proc. Electrochem. Soc., PV, 97-29, 194, 1998
• 7. J. Zhao, A. Wang, T. Truke, M. Green, MRS Proc., 744, M4.7, 2002
• 8. P. Jaguiro, S. Lazarouk, L. Pavesi, A. Smirnov, in: Proc. 10th Int. SID Symp., Minsk 2001, Ed. A. Smirnov, Society for Information Display, Raubichi 2001, p. 112
• 9. S. Lazarouk, P. Jaguiro, S. Katsouba, A. Prohorenko, Proc. Electrochem. Soc., PV, 7, 456, 1997
• 10. S. Lazarouk, P. Jaguiro, S. Katsouba, Advanced Metallization and Interconnect Systems for ULSI, Applications, Ed. R. Cheung, Materials Research Society ,San Diego 1997, p. 11
• 11. S. La Monica, M. Balucani, S. Lazarouk, G. Maiello, G. Masini, P. Jaguiro, A. Ferrari, Solid State Phenomena, 54, 21, 1997
• 12. K. Hirschman, L. Tsybeskov, S. Duttagupta, P. Fauchet, Nature, 384, 338, 1996
• 13. S. Lazarouk, P. Jaguiro, V. Borisenko, Phys. Status Solidi A, 165, 87, 1998
• 14. S. Lazarouk, P. Jaguiro, A. Leshok, V. Borisenko, in: Physics, Chemistry and Application of Nanostructures, World Press, Singapore 1999, p. 370
• 15. S. Lazarouk, A. Smirnov, A. Belous, S. Shvedov, in: Proc. 10th Int. SID Symp., Minsk 2001, Ed. A. Smirnov, Society for Information Display, Raubichi 2001, p. 76
• 16. S. Lazarouk, A. Smirnov, V. Labunov, in: Proc. IDMC-03, Taiwan 2003, Ed. SID, Society for Information Display, Taipei 2003, p. 3-08

Identifiers

DOI

10.12693/APhysPolA.112.1031