Characteristics of Optical and Photoconductive Properties in Bulk and Thin Film of TlS_2 Single Crystals

• Authors: A. Badr
• Languages of publication: EN

Abstracts

EN

The photoconductivity measurements were carried out for bulk single crystals of TlS_2 by using the steady state (dc) method in order to elucidate the nature of the dc photoconductivity in these crystals. The photoconductivity measurements were carried out in the temperature range of 77-300 K, excitation intensity range of 2150-5050 lx, applied voltage range of 10-25 V, and wavelength range of 400-915 nm. As a result of the dc photoconductivity, the temperature dependence of the energy gap width was described and the temperature coefficient of the band gap was determined. Reflectance and transmittance spectra of the TlS_2 thin films were measured in the incident photon energy range of 2.1-2.45 eV and in the temperature range of 77-300 K. With the aid of these spectra, the temperature dependence of optical transports and parameters were elucidated. In the low energy region of the studied incident photon energy range, the above-mentioned spectra were analyzed for describing the refractive index as a function of wavelength. As results of the refractive index-wavelength variations, both the oscillator and dispersion energies of the refractive index were thereafter estimated.

Keywords

EN

71.35.Cc; 73.50.Gr; 73.50.Pz; 78.20.-e; 78.20.Ci

Discipline

• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 71.35.Cc: Intrinsic properties of excitons; optical absorption spectra
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 73.50.Pz: Photoconduction and photovoltaic effects
• 73.50.Gr: Charge carriers: generation, recombination, lifetime, trapping, mean free paths

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2007
• Volume: 112
• Issue: 1
• Pages: 77-91

Dates

published

2007-07

received

2007-04-02

(unknown)

2007-07-17

Contributors

author

A. Badr

• Physics Department, Faculty of Science, South Valley University, Aswan, Egypt

References

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Identifiers

DOI

10.12693/APhysPolA.112.77