Solid Solutions of Oxide Crystals as Substrates for Epitaxial Layer Depositions

• Authors: M Berkowski , J Fink-Finowicki , R Aleksijko , R Diduszko , P Byszewski , R Kikalejshvili-Domukhovska
• Languages of publication: EN

Abstracts

EN

We present results of investigation on growth of solid solution crystals with perovskites and K_2NiF_4 structures used as substrates for epitaxy. Perovskite single crystals with no twins and crystals with K_2NiF_4 structure with the lattice parameter in the range 3.876-3.819Å and 3.754 to 3.688Å, respectively, can be grown. Here preliminary results on investigation on growth of other solid solution crystals with the lattice constant from 3.946 to 3.688Å are also presented thus covering the whole interesting range for depositing oxide materials. These crystals can be grown by the Czochralski method that secures their high structural quality. Discussed crystals are resistant to reaction with the deposited oxide layers.

Keywords

EN

81.10.-h; 81.10.Fq; 61.10.Nz; 74.78.Bz

Discipline

• 81.10.Fq: Growth from melts; zone melting and refining
• 81.10.-h: Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation(see also 61.50.Lt Crystal binding, cohesive energy)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2006
• Volume: 109
• Issue: 4-5
• Pages: 457-463

Dates

published

2006-04

received

2005-09-25

Contributors

author

M Berkowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J Fink-Finowicki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R Aleksijko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R Diduszko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw Poland
• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

P Byszewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

R Kikalejshvili-Domukhovska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.109.457