Vertical Electron Transport in GaN/AlGaN Heterostructures

• Authors: A. Reklaitis
• Languages of publication: EN

Abstracts

EN

Nonequilibrium dc and large-signal ac vertical electron transport in GaN/AlGaN heterostructures is investigated by Monte Carlo simulations. The symmetric two-barrier GaN/AlGaN heterostructures are studied. The results of simulations show that polarization charges have a profound effect on dc and large-signal ac characteristics of vertical electron transport in GaN/AlGaN heterostructures. Under certain composition, geometry and doping profile, the GaN/AlGaN heterostructures may become bipolar, i.e., the inversion layers may originate at heterointerfaces due to strong built-in electric fields, which are induced by polarization charges.

Keywords

EN

73.40.Kp; 72.20.-i; 72.30.+q

Discipline

• 72.30.+q: High-frequency effects; plasma effects
• 72.20.-i: Conductivity phenomena in semiconductors and insulators(see also 66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves)
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 261-266

Dates

published

2005-02

received

2004-08-22

Contributors

author

A. Reklaitis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.107.261