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Number of results
2005 | 107 | 2 | 245-249

Article title

Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells

Content

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Languages of publication

EN

Abstracts

EN
We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.

Keywords

EN

Contributors

author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio al. 11, 10223 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio al. 11, 10223 Vilnius, Lithuania
author
  • Department of Physics, UMIST, University of Manchester, Manchester M60 1QD, United Kingdom
author
  • Department of Physics, UMIST, University of Manchester, Manchester M60 1QD, United Kingdom
author
  • IMP, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
author
  • Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JJD, Sheffield, United Kingdom

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv107n205kz
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