Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors

• Authors: E. Starikov , P. Shiktorov , V. Gružinskis , L. Varani , J. Vaissière , C. Palermo , L. Reggiani
• Languages of publication: EN

Abstracts

FR

Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A_3B_5 compounds. This property is favorable for applications of nitrides in the THz frequency range.

Keywords

EN

72.20.Ht; 72.30.+q; 72.70.+m

Discipline

• 72.70.+m: Noise processes and phenomena
• 72.20.Ht: High-field and nonlinear effects
• 72.30.+q: High-frequency effects; plasma effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 408-411

Dates

published

2005-02

received

2004-08-22

Contributors

author

E. Starikov

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
• CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier, (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France

author

P. Shiktorov

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

V. Gružinskis

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

L. Varani

• CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier, (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France

author

J. Vaissière

• CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier, (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France

author

C. Palermo

• CEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier, (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France

author

L. Reggiani

• INFM - National Nanotechnology Laboratory, Dipartimento di Ingegneria, dell'Innovazione, Università di Lecce, via Arnesano s/n, 73100 Lecce, Italy

References

• 1. S. Dhar, S. Ghosh, J. Appl. Phys, 86, 2668, 1999
• 2. B. Foutz, S. O'Leary, M. Shur, L. Eastman, J. Appl. Phys, 85, 7727, 1999
• 3. J.M. Barker, R. Akis, T.J. Thornton, D.K. Ferry, S.M. Goodnick, Phys. Status Solidi A, 190, 263, 2002
• 4. E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J.C. Vaissière, Jian H. Zhao, J. Appl. Phys, 89, 1161, 2001

Identifiers

DOI

10.12693/APhysPolA.107.408