Photoelectrical Properties of 1.3μm Emitting InAs Quantum Dots in InGaAs Matrix

• Authors: A. Persano , A. Cola , L. Vasanelli , A. Convertino , G. Leo , L. Cerri , M. Frassanito , S. Viticoli
• Languages of publication: EN

Abstracts

EN

We present a study of photoelectrical properties of the Stranski-Krastanow InAs quantum dots embedded in an InGaAs matrix with low In content, emitting at about 1.3μm. The ground-state electron-hole transition of the dots was investigated as a function of the temperature in presence of electric fields parallel and perpendicular to the plane of the dots by photocurrent spectroscopy. Microphotoluminescence measurements were also carried out, allowing us to evidence carrier capture from the GaAs matrix into the dots.

Keywords

EN

78.67.Hc; 73.63.Kv; 81.07.Ta

Discipline

• 78.67.Hc: Quantum dots
• 81.07.Ta: Quantum dots
• 73.63.Kv: Quantum dots

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 381-387

Dates

published

2005-02

received

2004-08-22

Contributors

author

A. Persano

• CNR-IMM sez. di Lecce, via Arnesano, 73100 Lecce, Italy
• Dipartimento di Ingegneria dell'Innovazione, Universitá degli Studi di Lecce, Lecce, Italy

author

A. Cola

• CNR-IMM sez. di Lecce, via Arnesano, 73100 Lecce, Italy

author

L. Vasanelli

• Dipartimento di Ingegneria dell'Innovazione, Universitá degli Studi di Lecce, Lecce, Italy

author

A. Convertino

• CNR-ISMN, sez. di Roma, via Salaria Km 29,300, 00016 Monterotondo St., Roma, Italy

author

G. Leo

• CNR-ISMN, sez. di Roma, via Salaria Km 29,300, 00016 Monterotondo St., Roma, Italy

author

L. Cerri

• CNR-ISMN, sez. di Roma, via Salaria Km 29,300, 00016 Monterotondo St., Roma, Italy

author

M. Frassanito

• National Nanotechnology Laboratory-INFM, via Arnesano, 73100 Lecce, Italy

author

S. Viticoli

• CNR-ISMN, sez. di Roma, via Salaria Km 29,300, 00016 Monterotondo St., Roma, Italy

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Identifiers

DOI

10.12693/APhysPolA.107.381