Transients of Carrier Recombination and Diffusion in Highly Excited GaN Studied by Photoluminescence and Four-Wave Mixing Techniques

• Authors: S. Juršėnas , S. Miasojedovas , G. Kurilčik , A. Žukauskas , R. Aleksiejūnas , T. Malinauskas , M. Sūdžius , K. Jarašiūnas
• Languages of publication: EN

Abstracts

EN

Time-resolved photoluminescence and four-wave mixing techniques have been combined for studies of carrier relaxation dynamics in a highly photoexcited GaN epilayer. For a moderate excitation density below 1 mJ/cm^2, carrier recombination was due to free carrier capture by deep traps. The characteristic time of carrier capture,τ_e=550 ps, was measured under deep trap saturation regime. The ambipolar diffusion coefficient for free carriers, D=1.7 cm^2/s, was estimated from the analysis of the transients of the light-induced gratings of various periods. A complete saturation of the four-wave mixing efficiency was observed for the excitation energy density exceeding 1.5 mJ/cm^2. The latter saturation effect was shown to be related to electron-hole plasma degeneration, which results in a significant enhancement of carrier recombination rate due to onset of stimulated emission.

Keywords

EN

72.80.Ey; 72.20.Jv; 78.55.Cr

Discipline

• 78.55.Cr: III-V semiconductors
• 72.80.Ey: III-V and II-VI semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 240-244

Dates

published

2005-02

received

2004-08-22

Contributors

author

S. Juršėnas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

S. Miasojedovas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

G. Kurilčik

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

A. Žukauskas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

R. Aleksiejūnas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

T. Malinauskas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

M. Sūdžius

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

K. Jarašiūnas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.107.240