Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells

• Authors: B. Čechavičius , J. Kavaliauskas , G. Krivaitė , D. Seliuta , E. Širmulis , J. Devenson , G. Valušis , B. Sherliker , M. Halsall , M. Steer , P. Harrison
• Languages of publication: EN

Abstracts

EN

We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2×10^{10} up to 2.5×10^{12} cm^{-2}, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.

Keywords

EN

78.66.-w; 85.30.De

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 328-332

Dates

published

2005-02

received

2004-08-22

Contributors

author

B. Čechavičius

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

author

J. Kavaliauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

author

G. Krivaitė

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

author

D. Seliuta

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

author

E. Širmulis

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

author

J. Devenson

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

author

G. Valušis

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

author

B. Sherliker

• Department of Physics, UMIST, Manchester M60 1QD, United Kingdom

author

M. Halsall

• Department of Physics, UMIST, Manchester M60 1QD, United Kingdom

author

M. Steer

• Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Sheffield, United Kingdom

author

P. Harrison

• IMP, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

References

• 1. W.M. Zheng, M.P. Halsall, P. Harmer, P. Harrison, M.J. Steer, Appl. Phys. Lett., 84, 735, 04
• 2. Shouvik Datta, Sandip Ghosh, B.M. Arora, Rev. Sci. Instrum., 72, 177, 01
• 3. L. Kronik, Y. Shapira, Surf. Sci. Rep., 39, 1, 99
• 4. R.F. Kirkman, R.A. Stradling, P.J. Lin-Chung, J. Phys. C, Solid State Phys., 11, 419, 78
• 5. W.M. Zheng, P. Halsall, P. Harrison, J.-P.R. Wells, I.V. Bradley, M.J. Steer, Appl. Phys. Lett., 83, 3719, 03
• 6. C.J. Summers, R. Dingle, D.E. Hill, Phys. Rev. B, 1, 1603, 70

Identifiers

DOI

10.12693/APhysPolA.107.328