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Number of results
2005 | 107 | 2 | 298-303

Article title

Frequency Dependence of Shot Noise in Resonant Diodes under Coherent Tunneling

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EN

Abstracts

EN
The current spectral density and the Fano factor of a resonant diode are investigated as a function of frequency up to values just below the inverse of the transit time. We consider the case of coherent tunneling for a symmetric double barrier structure at voltages up to the first current peak at 77 K. At high frequencies the Fano factor is found to become suppressed systematically at a value of 0.25 independently of frequency. This suppression below 0.5 is an indication of coherent against sequential tunneling transport.

Keywords

Contributors

author
  • Institute for Physics of Microstructures, Nizhny Novgorod GSP-105 603600, Russia
author
  • National Nanotechnology Laboratory of INFM, Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, via Arnesano s/n, 73100 Lecce, Italy
author
  • National Nanotechnology Laboratory of INFM, Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, via Arnesano s/n, 73100 Lecce, Italy

References

  • 1. V.Ya. Aleshkin, L. Reggiani, N.V. Alkeev, V.E. Lyubchenko, C.N. Ironside, J.M.L. Figuerido, C.R. Stanley, cond-matter/0304077 (2003), Phys. Rev. B, 70, 115321, 2004
  • 2. D.V. Averin, J. Appl. Phys., 73, 2593, 1993
  • 3. Y.M. Blanter, M. Buttiker, Phys. Rev. B, 59, 10217, 1999
  • 4. Y. Wei, B. Wang, J. Wang, H. Guo, Phys. Rev. B, 60, 16900, 1999
  • 5. G. Iannaccone, M. Macucci, B. Pellegrini, Phys. Rev. B, 55, 4539, 1997

Document Type

Publication order reference

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YADDA identifier

bwmeta1.element.bwnjournal-article-appv107n216kz
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