Spin-Polarized Carrier Injection in MOCVD-Grown YBCO/STO/LSMO Heterostructures with Underlying YBCO Layer

• Authors: B. Vengalis , V. Plaušinaitiene , A. Abrutis , Z. Šaltytė
• Languages of publication: EN

Abstracts

EN

The oxide heterostructures composed of superconducting YBa_2Cu_3O_7 bottom layer, the overlying ferromagnetic La_{1-x}Sr_xMnO_3 film and SrTiO_3 as ultrathin (d≈5 nm) barrier were grown heteroepitaxially onto LaAlO _3 substrates by applying pulsed liquid injection metalorganic chemical vapour deposition technique. We report anomalous interface resistance increase with cooling just below superconductive transition temperature (T_c≅85 K) and enhanced suppression of supercurrent of strip-like YBa_2Cu_3O_7 film due to spin-polarized carriers injected from the ferromagnetic manganite layer.

Keywords

EN

74.50.+r; 81.15.Gh; 85.25.-j

Discipline

• 74.50.+r: Tunneling phenomena; Josephson effects(for SQUIDs, see 85.25.Dq; for Josephson devices, see 85.25.Cp; for Josephson junction arrays, see 74.81.Fa)
• 85.25.-j: Superconducting devices
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 286-289

Dates

published

2005-02

received

2004-08-22

Contributors

author

B. Vengalis

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

V. Plaušinaitiene

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania
• Vilnius University, Dept. of General and Inorganic Chemistry, Naugarduko 24, 2006, Vilnius, Lithuania

author

A. Abrutis

• Vilnius University, Dept. of General and Inorganic Chemistry, Naugarduko 24, 2006, Vilnius, Lithuania

author

Z. Šaltytė

• Vilnius University, Dept. of General and Inorganic Chemistry, Naugarduko 24, 2006, Vilnius, Lithuania

References

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• 5. Y. Gim, A.W. Kleinsasser, J.B. Barner, J. Appl. Phys., 90, 4063, 2001
• 6. B. Vengalis, V. Plausinaitiene, A. Abrutis, R. Butkute, J.P. S'enateur, Z. Saltyte, J. Phys. (France) IV, 11, 53, 2001

Identifiers

DOI

10.12693/APhysPolA.107.286