Pressure Dependence of Elastic Constants in Zinc-Blende III-N and Their Influence on the Light Emission in Nitride Heterostructures

• Authors: S. Łepkowski , J. Majewski
• Languages of publication: EN

Abstracts

EN

We studied the nonlinear elasticity effects for the case of III-N compounds. Particularly, we determined the pressure dependences of elastic constants, in zinc-blende InN, GaN, and AlN by performing ab initio calculations in the framework of plane-wave pseudopotential implementation of the density-functional theory. We found significant and almost linear increase in C_{11}, C_{12} with pressure for considered nitrides compounds. Much weaker dependence on pressure was observed for C_{44}. We also discussed pressure dependences of two-dimensional Poisson's ratio and elastic anisotropy coefficient. Finally, we showed that the pressure dependence of elastic constants results in significant reduction of the pressure coefficient of the energy emission in cubic InGaN/GaN quantum wells and essentially improves the agreement between experimental and theoretical values.

Keywords

EN

62.20.Dc; 62.50.+p

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 105
• Issue: 6
• Pages: 559-566

Dates

published

2004-06

received

2004-05-28

Contributors

author

S. Łepkowski

• Unipress, High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

author

J. Majewski

• Walter Schottky Institute, Technische Universität München, Garching, Germany

References

• 1. M.D. Frogley, J.R. Downes, D.J. Dunstan, Phys. Rev. B 62, 13612 (2000)
• 2. S.W. Ellaway, D.A. Faux, Phys. Status Solidi B 235, 437 (2003)
• 3. S.W. Ellaway, D.A. Faux, J. Appl. Phys. 92, 3027 (2002)
• 4. V. Holy, G. Springholz, M. Pinczolits, G. Bauer, Phys. Rev. Lett. 83, 356 (1999)
• 5. R. Kato, J. Hama, J. Phys., Condens. Matter 6, 7617 (1994)
• 6. G. Vaschenko, C.S. Menoni, D. Patel, C.N. Tome, B. Clausen, N.F. Gardner, J. Sun, W. Gotz, H.M. Ng, A.Y. Cho, Phys. Status Solidi B 235, 238 (2003)
• 7. S.P. Łepkowski, H. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies, Appl. Phys. Lett. 79, 1483 (2001)
• 8. G. Vaschenko, D. Patel, C.S. Menoni, S. Keller, U.K. Mishra, S.P. DenBaars, Appl. Phys. Lett. 78, 640 (2001)
• 9. T. Suski, H. Teisseyre, S.P. Łepkowski, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, S.F. Chichibu, Appl. Phys. Lett. 81, 232 (2002)
• 10. W.E. Pickett, Comp. Phys. Rep. 9, 117 (1989)
• 11. G. Kresse, J. Furthmuller, Phys. Rev. B 54, 11169 (1996)
• 12. S. Bhagavantam, Crystal Symmetry and Physical Properties, Academic Press, London 1966, p. 147
• 13. A.F. Wright, J. Appl. Phys. 82, 2833 (1997)
• 14. F. Grosse, J. Neugebauer, Phys. Rev. B 63, 085207 (2001)
• 15. A. Polian, in: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, Eds. J.H. Edgar, S. Strite, I. Akasaki, H. Amano, C. Wetzel, Datareviews Series 3, INSPEC, London 1999, A1.3
• 16. S.-H. Wei, A. Zunger, Phys. Rev. B 60, 5404 (1999)
• 17. E. Anastassakis, Phys. Rev. B 46, 13244 (1992)
• 18. C.G. Van de Walle, J. Neugebauer, Appl. Phys. Lett. 70, 2577 (1997)
• 19. P. Perlin, I. Gorczyca, T. Suski, P. Wisniewski, S. Łepkowski, N.E. Christensen, A. Svane, M. Hansen, S.P. DenBaars, B. Damilano, N. Grandjean, J. Massie, Phys. Rev. B 64, 115319 (2001)
• 20. S.K. Pugh, D.J. Dugdale, S. Brand, R.A. Abram, Semicond. Sci. Technol. 14, 23 (1999)
• 21. L.K. Teles, J. Furthmuller, L.M.R. Scalfaro, J.R. Leite, F. Bechstedt, Phys. Rev. B 63, 085204-1 (2001)
• 22. P. Perlin, W. Trzeciakowski, E. Litwin-Staszewska, J. Muszalski, M. Micovic, Semicond. Sci. Technol. 9, 2239 (1994)

Identifiers

DOI

10.12693/APhysPolA.105.559