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Number of results
2004 | 105 | 6 | 645-650

Article title

MnAs Overlayer on GaN(000_1)-(1 x 1) - Its Growth, Morphology and Electronic Structure

Content

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Languages of publication

EN

Abstracts

EN
MnAs layer has been grown by means of MBE on the GaN(000_1)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.

Keywords

EN

Contributors

author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • MAX Laboratory, Lund University, PO Box 118, 221 00 Lund, Sweden
author
  • High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29, 01-141 Warsaw, Poland
author
  • High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29, 01-141 Warsaw, Poland

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv105n613kz
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