Control of Valence-Band Hole Spin by Electric Field

• Authors: A. Dargys
• Languages of publication: EN

Abstracts

EN

Coherent properties of the hole spin in an electric field are investigated. The tunneling between valence bands is used to control the transitions between the spin states. Extensive numerical studies using the time-dependent Schrödinger equation for valence band are presented to demonstrate the characteristic properties of the hole spin dynamics in dc, harmonic, as well as optimized electric fields for real valence bands of silicon. The paper also shows how one can connect the average hole spin with the initial hole wave function in the time-dependent Schrödinger equation.

Keywords

EN

72.20.Jv; 73.40.Gk; 78.55.-m; 79.90.+b

Discipline

• 79.90.+b: Other topics in electron and ion emission by liquids and solids and impact phenomena (restricted to new topics in section 79)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 105
• Issue: 3
• Pages: 295-306

Dates

published

2004-03

received

2003-11-28

Contributors

author

A. Dargys

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.105.295