Nonlinear Diffusion in Excited HgCdTe and Si Crystals

• Authors: A. Janavičius , Ž. Norgėla , R. Purlys
• Languages of publication: EN

Abstracts

EN

We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on time in a special way. For the description of the excited systems, we used a special temperature function, which defined the time dependent diffusion coefficient and the Boltzmann distribution of the excited vacancies or impurity atoms in solids. This model was used for the approximation of indium concentration profiles in HgCdTe of a rapid diffusion component and very fast diffusion of metastable vacancies irradiated by soft X-rays in an excited Si crystal.

Keywords

EN

66.30.-h; 66.30.Hs; 78.70.Ck

Discipline

• 78.70.Ck: X-ray scattering
• 66.30.-h: Diffusion in solids(for surface and interface diffusion, see 68.35.Fx)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 104
• Issue: 5
• Pages: 459-467

Dates

published

2003-11

received

2003-07-11

Contributors

author

A. Janavičius

• Department of Physics and Mathematics, Šiauliai University, Višinskio 25, 5400, Šiauliai, Lithuania

author

Ž. Norgėla

• Department of Physics and Mathematics, Šiauliai University, Višinskio 25, 5400, Šiauliai, Lithuania

author

R. Purlys

• Faculty of Physics, Vilnius University, Saulėtekio 9, 2040 Vilnius, Lithuania

References

• 1. A.J. Janavičius, Phys. Lett. A, 224, 159, 1997
• 2. A.J. Janavičius, Acta Phys. Pol. A, 93, 505, 1998
• 3. A.J. Janavičius, Ž. Norgėla, D. Jurgaitis, Math. Model. Anal., 6, 77, 2001
• 4. Seung-Man Park, Jae Mook Kim, Hee Chul Lee, Choong-Ki Kim, J. Appl. Phys., 35, 1554, 1996
• 5. R. Purlys, A.J. Janavičius, A. Mekys, S. Balakauskas, J. Storasta, Lith. J. Phys., 41, 376, 2001
• 6. J. Marciak-Kozlowska, Z. Mucha, Lith. J. Phys., 35, 616, 1995 (in Russian)
• 7. B.N. Mukashev, X.A. Abdulin, Yu.V. Gorelinski, Adv. Phys. Sci., 170, 143, 2000 (in Russian)
• 8. A.J. Janavičius, Acta Phys. Pol. A, 93, 731, 1998
• 9. A.J. Janavičius, J. Banys, R. Purlys, S. Balakauskas, Lith. J. Phys., 42, 337, 2002
• 10. V.S. Vavilov, A.E. Kiv, O.R. Nijazova, Mechanism of Producing and Migration of Defects in Semiconductors, Science, Moscow 1981, p. 368
• 11. J.A. Van Vechten, Phys. Rev. B, 10, 1482, 1974
• 12. G.D. Watkins, Mater. Sci. Semicond. Proc., 3, 227, 2000
• 13. I.P. Stepanenko, Foundations of Microelectronics, Soviet radio, Moscow 1980, p. 424 (in Russian)

Identifiers

DOI

10.12693/APhysPolA.104.459