Variable Temperature STM/STS Investigations of Ag Nanoparticles Growth on Semiconductor Surfaces

• Authors: S. Suto , R. Czajka , S. Szuba , A. Shiwa , S. Winiarz , H. Nagashima , H. Kato , T. Yamada , A. Kasuya
• Languages of publication: EN

Abstracts

EN

We have investigated the growth of Ag nanoparticles deposited on Si(111), H/Si(111)-(1×1) and Bi_2Te_3 substrates using a variable temperature scanning tunneling microscopy. These substrates are different as regards the model system for cluster and islands growth at the nanometer scale. Ag was evaporated onto the sample mounted at the scanning tunneling microscopy stage in vacuum of 10^{-10} Torr range during evaporation. The substrates were kept at different temperatures: -150˚C, room temperature, and 300˚C during the deposition process. In general, we have observed 3D growth mode up to several ML coverage. The density of clusters and their size were functions of the substrate's temperature during the deposition process - a higher density and a smaller size at -150˚C were in opposition to the 300˚C results - a lower density and a larger size. Low temperature depositions led to continuous layers above 10 ML coverage but the surface was covered by small Ag clusters of 1-2 nm in heights and 2-3 nm in diameters. The log-log graphs of height and projected diameter of Ag clusters revealed different slopes indicating different growth mechanisms at low and high temperatures. We obtained the value of n=0.25±0.02, typical of the so-called droplet model of cluster growth, only at 300˚C. Scanning tunneling spectroscopy measurements revealed clearly different I-V (and dI/dV vs. bias voltage) curves measured above clusters and directly above the substrate. In discussion, we compared our results to theoretically calculated density of states from other papers, finding conformity for partial density of states.

Keywords

EN

68.37.Ef; 68.47.Fg; 68.55.Ac

Discipline

• 68.47.Fg: Semiconductor surfaces
• 68.37.Ef: Scanning tunneling microscopy (including chemistry induced with STM)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 104
• Issue: 3-4
• Pages: 289-302

Dates

published

2003-09/10

received

2003-07-16

Contributors

author

S. Suto

• Department of Physics, Tohoku University, Sendai 980-8578, Japan

author

R. Czajka

• Faculty of Technical Physics, Poznan University of Technology, Nieszawska 13 A, 60-965 Poznań, Poland
• Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan

author

S. Szuba

• Faculty of Technical Physics, Poznan University of Technology, Nieszawska 13 A, 60-965 Poznań, Poland

author

A. Shiwa

• Department of Physics, Tohoku University, Sendai 980-8578, Japan

author

S. Winiarz

• Faculty of Technical Physics, Poznan University of Technology, Nieszawska 13 A, 60-965 Poznań, Poland

author

H. Nagashima

• Department of Physics, Tohoku University, Sendai 980-8578, Japan

author

H. Kato

• Department of Physics, Tohoku University, Sendai 980-8578, Japan

author

T. Yamada

• Institute of Physical and Chemical Research, Wako 351-0198, Japan

author

A. Kasuya

• Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan

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Identifiers

DOI

10.12693/APhysPolA.104.289