Infrared Lateral Photoconductivity of InGaAs Quantum Dots: the Temperature Dependence

• Authors: L. Moldavskaya , V. Shashkin , M. Drozdov , V. Daniltsev , A. Antonov , A. Yablonsky
• Languages of publication: EN

Abstracts

EN

We report the temperature dependence of lateral infrared photoconductivity in multilayer InGaAs/GaAs heterostructures with selectively doped quantum dots fabricated by metalorganic chemical vapor deposition. Two spectral lines of normal-inci dence intersubband photoconductivity (90 meV and 230 meV) and a line originating from interband transitions (930 meV) were observed. The photoconductivity line 230 meV is revealed up to the temperature 140 K. The long-wavelength photoconductivity line 90 meV is quenched rapidly at the temperature 30÷40 K owing to redistribution of photoexcited carriers between small and large dots. The obtained results confirm the hypothesis about bimodal distribution of quantum dot sizes.

Keywords

EN

78.30.Fs; 78.55.Cr; 78.66.Fd

Discipline

• 78.55.Cr: III-V semiconductors
• 78.66.Fd: III-V semiconductors
• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 103
• Issue: 6
• Pages: 579-584

Dates

published

2003-06

received

2003-05-30

Contributors

author

L. Moldavskaya

• Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia

author

V. Shashkin

• Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia

author

M. Drozdov

• Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia

author

V. Daniltsev

• Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia

author

A. Antonov

• Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia

author

A. Yablonsky

• Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia

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Identifiers

DOI

10.12693/APhysPolA.103.579