Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation

• Authors: J. Łusakowski , W. Knap , E. Kamińska , A. Piotrowska , V. Gavrilenko
• Languages of publication: EN

Abstracts

EN

Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.

Keywords

EN

72.30.+q; 73.61.Ey

Discipline

• 73.61.Ey: III-V semiconductors
• 72.30.+q: High-frequency effects; plasma effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2003
• Volume: 103
• Issue: 6
• Pages: 545-551

Dates

published

2003-06

received

2003-05-30

Contributors

author

J. Łusakowski

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

W. Knap

• GES-CNRS - Université Montpellier 2, 34900 Montpellier, France

author

E. Kamińska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Piotrowska

• IPM, Russian Academy of Sciences, GSP-105, Niznij Novgorod, 603950, Russia

author

V. Gavrilenko

• IPM, Russian Academy of Sciences, GSP-105, Niznij Novgorod, 603950, Russia

References

• 1. B. Ferguson, X.-C. Zhang, Nature Mater., 1, 26, 2002
• 2. M. Dyakonov, M. Shur, Phys. Rev. Lett., 71, 2465, 93
• 3. M. Dyakonov, M. Shur, Appl. Phys. Lett., 67, 1137, 95
• 4. W. Knap, Y. Deng, S. Rumyantsev, J.Q. Lü, M.S. Shur, C.A. Saylor, L.C. Brunel, Appl. Phys. Lett., 80, 3433, 2002
• 5. W. Knap, Y. Deng, S. Rumyantsev, M.S. Shur, Appl. Phys. Lett., 81, 4637, 2002
• 6. X.G. Peralta, S.J. Allen, M.C. Wanke, N.E. Harff, J.A. Simmons, M.P. Lilly, J.L. Reno, P.J. Burke, J.P. Eisenstein, Appl. Phys. Lett., 81, 1627, 2002
• 7. J. Lusakowski, accepted for publication in Fizika Tverdogo Tela

Identifiers

DOI

10.12693/APhysPolA.103.545