Optical Properties of InAs Quantum Dots

• Authors: M. Willander , Q. Zhao , A. Jacob , S. Wang , Y. Wei
• Languages of publication: EN

Abstracts

EN

InAs quantum dots grown on GaAs substrate were investigated by optical spectroscopy. We particularly emphasized on the photoluminescence intensity, the stability of the photoluminescence intensity versus temperatures and wavelength of the InAs dot emission at various thermal treatments and different structures. We found that hydrogen can strongly passivate nonradiative centers without causing any structure degradation, and both n- and p-type modulation doping can reduce the decrease in the photoluminescence intensity when the sample temperature increases from the helium temperature to room temperature. The emission wavelength and the efficiency of the InAs quantum dots can also be manipulated by choosing proper materials of cap layer.

Keywords

EN

78.67.Hc; 78.55.Cr

Discipline

• 78.55.Cr: III-V semiconductors
• 78.67.Hc: Quantum dots

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 4-5
• Pages: 567-576

Dates

published

2002-10/11

received

2002-06-07

Contributors

author

M. Willander

• Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Göteborg University, 412 96 Göteborg, Sweden

author

Q. Zhao

• Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Göteborg University, 412 96 Göteborg, Sweden

author

A. Jacob

• Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Göteborg University, 412 96 Göteborg, Sweden

author

S. Wang

• Department of Microelectronics, Photonics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden

author

Y. Wei

• Department of Microelectronics, Photonics Laboratory, Chalmers University of Technology, 412 96 Göteborg, Sweden

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Identifiers

DOI

10.12693/APhysPolA.102.567