Interface Engineering in Heteroepitaxy

• Authors: S. Hong , Y. Chen , H. Ko , T. Yao
• Languages of publication: EN

Abstracts

EN

We report the importance of interface engineering in heteroepitaxy with examples of plasma-assisted molecular beam epitaxial ZnO growths on (0001) sapphire substrates and on (0001) GaN/sapphire templates, whose interfaces are engineered to improve and to control properties of ZnO films. The growth of rocksalt structure MgO buffer on Al_2O_3 (0001) is developed for ZnO epitaxy. By employing the MgO buffer layer, the formation of 30^o rotated mixed domains is prohibited and two-dimensional layer-by-layer growth of ZnO on sapphire substrate is achieved. High-resolution X-ray diffraction reveals the superior improvement in a crystal quality of ZnO films with an MgO buffer. Polarity of wurtzite structure ZnO films on Ga-polar GaN/sapphire templates is controlled by changing interface structures. By forming a single crystalline, monoclinic Ga_2O_3 interfacial layer between GaN and ZnO through O-plasma pre-exposure on the Ga-polar GaN surface, O-polar ZnO films are grown. By forming the ZnO/GaN heterointerface without an interfacial layer through the Zn pre-exposure on the Ga-polar GaN surface, Zn-polar ZnO films are grown.

Keywords

EN

68.35.-p; 68.35.Dv; 81.15.-z; 81.15.Hi; 81.10.Aj

Discipline

• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 68.35.Dv: Composition, segregation; defects and impurities
• 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)
• 81.10.Aj: Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation(see also 61.50.Nw Crystal stoichiometry)
• 68.35.-p: Solid surfaces and solid-solid interfaces: structure and energetics

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2002
• Volume: 102
• Issue: 4-5
• Pages: 541-554

Dates

published

2002-10/11

received

2002-06-07

Contributors

author

S. Hong

• Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

author

Y. Chen

• Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

author

H. Ko

• Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

author

T. Yao

• Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

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Identifiers

DOI

10.12693/APhysPolA.102.541