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PN-ISO 690:2012
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Journal
Acta Physica Polonica A
1996
|
90
|
4
| 789-792
Article title
Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si
Authors
M. Godlewski
,
J. Bergman
,
B. Monemar
,
U. Rossner
,
A. Barski
Content
Full texts:
Title variants
Languages of publication
EN
Abstracts
EN
Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are studied. The observed decay transients of excitonic emissions and their temperature dependence is explained by an efficient transfer link between bound and free excitons.
Keywords
EN
71.55.Eq
71.35.+z
78.47.+p
Discipline
71.55.Eq: III-V semiconductors
Publisher
Institute of Physics, Polish Academy of Sciences
Journal
Acta Physica Polonica A
Year
1996
Volume
90
Issue
4
Pages
789-792
Physical description
Dates
published
1996-10
Contributors
author
M. Godlewski
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
J. Bergman
Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden
author
B. Monemar
Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden
author
U. Rossner
CEA/Grenoble, Departement de Recherche Fondamentale sur la Matière Condensée/SP2M, 17 rue Martyrs, 38054 Grenoble Cedex 9, France
author
A. Barski
CEA/Grenoble, Departement de Recherche Fondamentale sur la Matière Condensée/SP2M, 17 rue Martyrs, 38054 Grenoble Cedex 9, France
References
Document Type
Publication order reference
Identifiers
DOI
10.12693/APhysPolA.90.789
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z429kz
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