Damage Production in As Implanted GaAs_{1-x}P_{x}

• Authors: J. Krynicki , S. Warchoł , H. Rzewuski , R. Groetzschel
• Languages of publication: EN

Abstracts

EN

Post-implantation damage in GaAs_{1-x}P_{x} compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10^{13} -8 × 10^{13} cm^{-2} at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscatter­ing 1.7 MeV He^{+} channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.

Keywords

EN

61.80.Jh

Discipline

• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 1
• Pages: 249-252

Dates

published

1995-01

Contributors

author

J. Krynicki

• Institute of Nuclear Chemistry and Technology, Dorodna 16, 03-195 Warszawa, Poland

author

S. Warchoł

• Institute of Nuclear Chemistry and Technology, Dorodna 16, 03-195 Warszawa, Poland

author

H. Rzewuski

• Institute of Nuclear Chemistry and Technology, Dorodna 16, 03-195 Warszawa, Poland

author

R. Groetzschel

• FZR Forschungszentrum Rossendorf, Rossendorf/Dresden, Germany

Identifiers

DOI

10.12693/APhysPolA.87.249