On Subband Mobilities Observed in δ-doped AlGaAs/GaAs Quantum Wells and GaAs Layers

• Authors: L. Dobaczewski , D. Maude , M. Missous , J. Portal
• Languages of publication: EN

Abstracts

EN

Electronic transport phenomena in molecular beam epitaxy grown sil­icon δ-doped AlGaAs/GaAs quantum wells and GaAs layers were investi­gated. Observations of the Shubnikov-de Haas oscillations allowed to deduce the redistribution of electrons among energy subbands formed by V-shaped and rectangular wells for GaAs layers and the AlGaAs/GaAs quantum wells, respectively. In both cases the effects of illumination upon individual sub-band mobilities and carrier concentrations were studied and the manifesta­tion of the DX centres was demonstrated.

Keywords

EN

71.25.Hc; 71.55.Eq; 73.20.Dx

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 1
• Pages: 201-204

Dates

published

1995-01

Contributors

author

L. Dobaczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

D. Maude

• SNCI CNRS, BP166, 38042 Grenoble Cedex 9, France

author

M. Missous

• Department of Electrical Engineering and Electronics, UMIST, P.O. Box 88, Manchester M60 1QD, Great Britain

author

J. Portal

• SNCI CNRS, BP166, 38042 Grenoble Cedex 9, France

Identifiers

DOI

10.12693/APhysPolA.87.201