Transformation of Native Defects in GaAs under Ultrasonic Treatment

• Authors: A. Mąkosa , T. Wosiński , Z. Witczak
• Languages of publication: EN

Abstracts

EN

Effect of high-intensity ultrasonic vibration on the spectrum of deep electron traps in bulk GaAs has been studied giving rise to a discussion on microscopic structure of native defects associated with the traps.

Keywords

EN

61.72.Ji; 62.80.+f; 71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors
• 62.80.+f: Ultrasonic relaxation(see also 43.35.Fj Ultrasonic relaxation processes in liquids and solids—in Acoustics Appendix; for ultrasonic attenuation in superconductors, see 74.25.Ld)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 653-656

Dates

published

1993-10

Contributors

author

A. Mąkosa

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Wosiński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

Z. Witczak

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.653