Shallow Ohmic Contact System to n-GaAs

• Authors: E. Kamińska , A. Piotrowska , T. Piotrowski , A. Barcz , M. Guziewicz , J. Adamczewska , S. Kwiatkowski
• Languages of publication: EN

Abstracts

EN

Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.

Keywords

EN

73.40.Ns

Discipline

• 73.40.Ns: Metal-nonmetal contacts

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 804-806

Dates

published

1993-10

Contributors

author

E. Kamińska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Piotrowska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Piotrowski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Barcz

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Guziewicz

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Adamczewska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Kwiatkowski

• Institute of Nuclear Studies, Hoża 69, 00-682 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.804