Mechanism of Thermal Interaction of In with GaAs

• Authors: A. Barcz , J. Adamczewska , J. Baranowski , S. Kwiatkowski
• Languages of publication: EN

Abstracts

EN

General behavior of In/GaAs couple heat-treated at 570°C for 2 hours was studied with secondary-ion-mass spectrometry, scanning electron microscopy, Rutherford backscattering spectroscopy and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, In interacts with the substrate dislocations to form In(Ga)As dendrites. The driving force for this process is presumably excess arsenic reported to be present in the vicinity of the individual dislocations.

Keywords

EN

73.40.Ns

Discipline

• 73.40.Ns: Metal-nonmetal contacts

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 801-803

Dates

published

1993-10

Contributors

author

A. Barcz

• Institute of Electronic Technology, Al. Lotników 46, 02-668 Warszawa, Poland

author

J. Adamczewska

• Institute of Electronic Technology, Al. Lotników 46, 02-668 Warszawa, Poland

author

J. Baranowski

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland

author

S. Kwiatkowski

• Institute for Nuclear Problems, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.801