Photo-ESR Study of the DX to Shallow Donor Conversion in Te Doped Al_{x}Ga_{1-x}As

• Authors: M. Surma , Z. Żytkiewicz , K. Fronc , P. Stalinga , M. Godlewski
• Languages of publication: EN

Abstracts

EN

Results of detailed electron spin resonance (ESR) study of Te doped Al_{x}Ga_{1-x}As epilayers with x = 0.41, 0.42, and 0.5 Al fractions are presented. It is shown that the ESR signal observed critically depends on cooling steps and that the shallow donor ESR signal can be observed prior to illumination. The first ESR study of AlGaAs layers with removed GaAs substrate are presented. The mechanism of the enhanced photosensitivity of the ESR signal is explained. It is found very paradoxical that the ESR signals decreases upon the illumination even though shallow donor concentration is increased.

Keywords

EN

71.55.Eq; 76.30.Lh; 78.66.Fd

Discipline

• 78.66.Fd: III-V semiconductors
• 71.55.Eq: III-V semiconductors
• 76.30.Lh: Other ions and impurities

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 757-760

Dates

published

1993-10

Contributors

author

M. Surma

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

Z. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

K. Fronc

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

P. Stalinga

• Van der Waals-Zeeman Lab., Amsterdam University, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.757