Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure

• Authors: T. Sosin , P. Perlin , W. Trzeciakowski , R. Tober
• Languages of publication: EN

Abstracts

EN

The interband absorption of strained InGaAs/GaAs multiple quantum well was studied at room temperature for pressures up to 5.5 GPa. Three absorption lines were attributed to the excitonic transitions hh1-e1, lh1-e1 and hh2-e2. They were visible until pressure of about 5 GPa which is above the Γ-X crossover for this system. Pressure coefficients of the observed lines were compared with the literature data. The origin of broadening of the lines above Γ-X crossover is discussed.

Keywords

EN

73.20.Dx

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 749-752

Dates

published

1993-10

Contributors

author

T. Sosin

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

author

P. Perlin

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

author

W. Trzeciakowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

author

R. Tober

• U.S. Army Laboratory Command, 2800 Powder Mill Road, Adelphi, Md 20783, USA

Identifiers

DOI

10.12693/APhysPolA.84.749