Magnetoresistance of n-CdTe in the "Persistent" State

• Authors: P. Kossacki , K. Karpierz
• Languages of publication: EN

Abstracts

EN

In this paper we present results of measurements done on photoexcited carriers in high purity n-CdTe at liquid helium temperature. The photocurrent under near band gap illumination was measured, as well as the long term (≈ 15 hours) photoconductive decay after switching off the light. The transverse magnetoresistance was measured in high magnetic fields in two cases: 1) under external illumination, 2) in the "persistent" state after ≈ 15 h of photocurrent decay. It was shown that in high magnetic fields this magnetoresistance exhibits a quadratic dependence on magnetic field (Δρ/ρ ≈ B^{2}) in both cases.

Keywords

EN

72.40.+w; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 737-740

Dates

published

1993-10

Contributors

author

P. Kossacki

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

K. Karpierz

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.737