Photoluminescence Properties of Porous Silicon Prepared by Electrochemical Etching of Si Epitaxial Layer

• Authors: E. Nossarzewska-Orłowska , A. Brzozowski
• Languages of publication: EN

Abstracts

EN

The photoluminescence properties of porous layers prepared by anodization of p/p^{+} silicon epitaxial wafers are presented. The shift of the photoluminescence spectrum towards shorter wavelength due to the porosity increase and the experimental dependence of the photoluminescence maximum position on HF concentration during anodization are shown. Degradation of the photoluminescence intensity dependence on the storage time is described.

Keywords

EN

78.55.Hx; 81.60.-j

Discipline

• 78.55.Hx: Other solid inorganic materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 713-716

Dates

published

1993-10

Contributors

author

E. Nossarzewska-Orłowska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

A. Brzozowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.713