Kinetic Exchange in Diluted Magnetic Semiconductors of Wurtzite Structure

• Authors: J. Blinowski , P. Kacman
• Languages of publication: EN

Abstracts

EN

Kinetic exchange between valence electrons and paramagnetic ions in diluted magnetic semiconductors of wurtzite structure is examined and compared with the results obtained previously for zinc-blende type diluted magnetic semiconductors. Two limiting electron configurations of the impurity ion, d^{5} and d^{1}, are discussed. For the former, it is shown that the exchange constant anisotropy, experimentally observed in CdMnSe, results from the anisotropy of the hybridization matrix elements. In the latter case, apart from the similar anisotropy of the ferromagnetic exchange constant, additional, antiferromagnetic corrections should be expected, since for this particular symmetry the hybridization between the ground state of the ion and valence band becomes allowed.

Keywords

EN

75.50.Pp; 75.30.-m

Discipline

• 75.50.Pp: Magnetic semiconductors
• 75.30.-m: Intrinsic properties of magnetically ordered materials(for critical point effects, see 75.40.-s; for magnetotransport phenomena, see 75.47.-m)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 4
• Pages: 693-696

Dates

published

1993-10

Contributors

author

J. Blinowski

• Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

P. Kacman

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.84.693