Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
1993 | 84 | 3 | 491-504

Article title

Ohmic Contacts to GaAs: Fundamentals and Practice

Authors

Content

Title variants

Languages of publication

EN

Abstracts

EN
Recent advances in the technology and understanding of ohmic contacts to GaAs are presented. The paper emphasizes the reactions at the metal/GaAs interface and the structural factors which govern its electrical behavior and long-term stability. Results on the optimization of conventional gold-based ohmic contacts together with recent achievements in the technology of non-alloyed contacts are overviewed.

Keywords

EN

Year

Volume

84

Issue

3

Pages

491-504

Physical description

Dates

published
1993-09

Contributors

author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv84z309kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.