High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

• Authors: G. Bauer , E. Koppensteiner , P. Hamberger , J. Nützel , G. Abstreiter , H. Kibbel , H. Presting , E. Kasper
• Languages of publication: EN

Abstracts

EN

Double crystal and triple axis X-ray diffractometry was used to characterize the structural properties of Si/Si_{1-x}Ge_{x} multiquantum well samples grown pseudomorphically on Si(001) substrates, as well as of short-period Si_{9}Ge_{6} superlattices grown by molecular beam epitaxy on rather thick step-graded Si_{1-x}Ge_{x} (0 < x < 0.4, 650 nm thick) buffers followed by 550 nm Si_{0.6} Ge_{0.4} layers. Reciprocal space maps around the (004) and (224) reciprocal lattice points yield direct information on the strain status of the layers in the heterostructure systems and in particular on the amount of strain relaxation.

Keywords

EN

68.65.+g; 61.10.-i; 68.55.Jk

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1993
• Volume: 84
• Issue: 3
• Pages: 475-489

Dates

published

1993-09

Contributors

author

G. Bauer

• Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria

author

E. Koppensteiner

• Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria

author

P. Hamberger

• Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria

author

J. Nützel

• Walter Schottky Institut, TU München, D-8046 Garching, Germany

author

G. Abstreiter

• Walter Schottky Institut, TU München, D-8046 Garching, Germany

author

H. Kibbel

• Daimler Benz AG, Forschungszentrum, Wilhelm Runge Straße 11, D-7900 Ulm, Germany

author

H. Presting

• Daimler Benz AG, Forschungszentrum, Wilhelm Runge Straße 11, D-7900 Ulm, Germany

author

E. Kasper

• Daimler Benz AG, Forschungszentrum, Wilhelm Runge Straße 11, D-7900 Ulm, Germany

Identifiers

DOI

10.12693/APhysPolA.84.475