The Symmetry of the EL2 Defect in the Metastable State

• Authors: P. Trautman , J. Baranowski
• Languages of publication: EN

Abstracts

EN

We measured recovery of the optical absorption of EL2 under [100] and [111] uniaxial stress during heating of the crystal. The recovery step, occurring at about 45 K in n-type GaAs, splits into two components under [111] stress, and no splitting is observed under [100] stress. The same behavior under uniaxial stress shows the recovery occurring at 125 K in semi-insulating GaAs. A fraction of centers recovering at lower temperature can be altered by excitation of metastability with polarized light or by excitation under stress. These results indicate that EL2 in the metastable state is trigonally distorted from the tetrahedral symmetry of the ground state.

Keywords

EN

71.55.Eq; 78.20.Hp; 78.50.Ge

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1992
• Volume: 82
• Issue: 4
• Pages: 609-612

Dates

published

1992-10

Contributors

author

P. Trautman

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J. Baranowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.82.609